-
Optimal
performance whilst transmitting on 23 cm by effective input filtering.
-
Unconditionally stable, no oscillations under mismatch conditions.
-
The
silver-plated printed circuit board with plated through holes has no
trimming
points.
-
E-pHEMT
GaAs FETs are used in a two-stage hf amplifier and guarantee low
noise
and a high output intercept point.
-
A
temperature compensated active biasing technique ensures settings with
excellent
stability.
-
Input
frequency range: 2.2 – 2.6 GHz. Gain hf part 28.5 dB (within 1dB),
noise figure 0.72 dB maximum.
-
Low phase noise and high stability is achieved using a SAW resonator
in the
Local
Oscillator.
-
L.O.
frequency: 916.5 MHz.
-
Double
balanced mixer features excellent L-R isolation and wide bandwidth, by
additional filtering 50 dB L-I isolation is achieved.
-
A 3.5 GHz.
broadband silicon monolithic amplifier is used in the I.F. section.
-
Total gain
42 dB typical.
-
Power
supply voltage window: 8 – 18V.
